Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain

Autor: Wang, Yu, Wang, Danni, Ma, Zelong, Chen, Wen, Jing, Sicheng, Pan, Jinghua, Bian, Baoan
Zdroj: In Chemical Physics 1 January 2024 576
Databáze: ScienceDirect