Systematic investigation of structure and optoelectronic properties of Gen (n = 3–20), MGe9 (M = Ga, Si, Sn, As) and GaxGe(10−x) (x = 1–10) Clusters: Computational approach

Autor: Mahdavifar, Zabiollah a, ⁎, Afshari, Mina b, Bagheri, Ahmad b, Arab, Ali b
Zdroj: In Polyhedron 1 January 2021 193
Databáze: ScienceDirect