Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications
Autor: | Myoung, Seung Joo a, 1, Shin, Dong Hyeop a, 1, Kim, Donguk a, Kim, Changwook a, Bae, Jong-Ho a, Choi, Sung-Jin a, Kim, Dong Myong a, Woo, Jiyong b, ⁎, Kim, Dae Hwan a, ⁎⁎ |
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Zdroj: | In Ceramics International December 2024 |
Databáze: | ScienceDirect |
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