Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications

Autor: Myoung, Seung Joo a, 1, Shin, Dong Hyeop a, 1, Kim, Donguk a, Kim, Changwook a, Bae, Jong-Ho a, Choi, Sung-Jin a, Kim, Dong Myong a, Woo, Jiyong b, ⁎, Kim, Dae Hwan a, ⁎⁎
Zdroj: In Ceramics International December 2024
Databáze: ScienceDirect