Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures

Autor: Kammutty Musliyarakath, Abdul Shekkeer, Cheong, Kuan Yew, Quah, Hock Jin
Zdroj: In Ceramics International 15 July 2024 50(14):25528-25540
Databáze: ScienceDirect