Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application
| Autor: | Kim, Jenam, Kim, Byung Seok, Lee, Ae Jin, Han, Dong Hee, Hwang, Ji Hyeon, Kim, Youngjin, Song, Ki-Chang, Oh, Hansol, Kim, Sangho, Park, Yongjoo, Jeon, Woojin |
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| Zdroj: | In Ceramics International 1 February 2022 48(3):3236-3242 |
| Databáze: | ScienceDirect |
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