Effects of annealing temperatures on the electrical properties of pulsed laser deposited Bi 3.25La 0.75Ti 3O 12 thin films for field effect transistor-type memory device

Autor: Lee, Jungsuk, Pak, Jaemoon, Nam, Kuangwoo, Kim, Jooyoung, Ko, Eunjung, Park, Gwangseo
Zdroj: In Ceramics International 2004 30(7):1557-1560
Databáze: ScienceDirect