Mechanism of novel defect multiplication impacting high power 4H-SiC devices
| Autor: | Mahadik, N.A., Dudley, M., Raghothamachar, B., Chen, Z., Stahlbush, R.E., Hinojosa, M., Lelis, A., Sung, W. |
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| Zdroj: | In Materials & Design December 2024 248 |
| Databáze: | ScienceDirect |
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