Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering

Autor: Chen, Hsueh-I, Chiu, Kun-An, Lin, Jing-Feng, Lin, Kuan-Yu, Chen, Wei-Chia, Wu, Ping-Hsun, Ko, Cheng-Jung, Chang, Li, Chen, Chun-Hua
Zdroj: In Surface & Coatings Technology 15 May 2022 437
Databáze: ScienceDirect