Atomic layer etching of (100)/(111) GaAs with chlorine and low angle forward reflected Ne neutral beam

Autor: Lim, Woong Sun, Park, Sang Duk, Park, Byoung Jae, Yeom, Geun Young
Zdroj: In Surface & Coatings Technology 30 August 2008 202(22-23):5701-5704
Databáze: ScienceDirect