Modification of new photoelectric material GaN by implantation of H +, He + and N + ion beam
| Autor: | Shude, Yao *, Shengqiang, Zhou, Shengxian, Jiao, Zhaoxiang, Meng, Yihong, Lu, Changchun, Sun, Chang, Sun, Vantomme, A., Langouche, G., Pipeleers, B., Zhao, Q. |
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| Zdroj: | In Surface & Coatings Technology 2002 158:412-415 |
| Databáze: | ScienceDirect |
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