Characteristics of BF 3 plasma-doped gate/source/drain for 0.18-μm pMOSFETs

Autor: Ha, Jung-Min *, Park, Jung-Woo, Felch, Susan, Fujihara, Kazuyuki, Kang, Ho-Kyu, Lee, Sang-In
Zdroj: In Surface & Coatings Technology 2001 136(1):157-161
Databáze: ScienceDirect