Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces

Autor: Yang, Y., Jin, C.G., Wu, Z.F., Wu, X.M., Zhuge, L.J., Yu, T.
Zdroj: In Materials Chemistry and Physics 15 November 2013 142(2-3):479-483
Databáze: ScienceDirect