Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions
| Autor: | Basha, S. Munawar, Asokan, K., Sangeetha, P., Ramakrishnan, V., Kumar, J. |
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| Zdroj: | In Materials Chemistry and Physics 15 February 2012 132(2-3):494-499 |
| Databáze: | ScienceDirect |
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