Effect of annealing time on Si/SiO 2 interface property for CMOS fabricated on hybrid orientation substrate with ATR method
| Autor: | Huang, Po Chin, Wu, San Lein, Chang, Shoou Jinn, Huang, Yao Tsung, Lin, Chien Ting, Ma, Mike, Cheng, Osbert |
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| Zdroj: | In Materials Chemistry and Physics 2011 126(1):16-19 |
| Databáze: | ScienceDirect |
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