Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS
Autor: | Cheng, P.L., Liao, C.I., Chien, C.C., Yang, C.L., Ting, S.F., Jeng, L.S., Huang, C.T., Cheng, Osbert, Tzou, S.F., Hsu, W.S. |
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Zdroj: | In Materials Chemistry and Physics 2008 107(2):471-475 |
Databáze: | ScienceDirect |
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