Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

Autor: Cheng, P.L., Liao, C.I., Chien, C.C., Yang, C.L., Ting, S.F., Jeng, L.S., Huang, C.T., Cheng, Osbert, Tzou, S.F., Hsu, W.S.
Zdroj: In Materials Chemistry and Physics 2008 107(2):471-475
Databáze: ScienceDirect