Characterization of vacancy-type defects in Al + and N + co-implanted SiC by slow positron implantation spectroscopy
| Autor: | Anwand, W a, *, Brauer, G a, Coleman, P.G b, Yankov, R a, Skorupa, W a |
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| Zdroj: | In Applied Surface Science 1999 149(1):140-143 |
| Databáze: | ScienceDirect |
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