Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3
Autor: | Tran, Trung Nguyen, Hayashi, Toshio, Iwayama, Hiroshi, Sekine, Makoto, Hori, Masaru, Ishikawa, Kenji |
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Zdroj: | In Applied Surface Science 1 March 2025 684 |
Databáze: | ScienceDirect |
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