Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3

Autor: Tran, Trung Nguyen, Hayashi, Toshio, Iwayama, Hiroshi, Sekine, Makoto, Hori, Masaru, Ishikawa, Kenji
Zdroj: In Applied Surface Science 1 March 2025 684
Databáze: ScienceDirect