Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga2O3 films grown by low-pressure chemical vapor deposition
Autor: | Hu, Jichao, Yang, Xiaodong, Meng, Jiaqi, Li, Yao, Xu, Bei, Zhang, Qi, Yuan, Lei, He, Xiaomin |
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Zdroj: | In Applied Surface Science 30 January 2025 680 |
Databáze: | ScienceDirect |
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