Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga2O3 films grown by low-pressure chemical vapor deposition

Autor: Hu, Jichao, Yang, Xiaodong, Meng, Jiaqi, Li, Yao, Xu, Bei, Zhang, Qi, Yuan, Lei, He, Xiaomin
Zdroj: In Applied Surface Science 30 January 2025 680
Databáze: ScienceDirect