Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses
| Autor: | Zhong, Jixiang, Lin, Xin, Sun, Han, Wang, Fang, Liu, Kai, Wei, Junqing, Li, Zewen, Ji, Yujing, Liu, Peng, Liu, Weili, Zhang, Kailiang |
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| Zdroj: | In Applied Surface Science 30 December 2024 678 |
| Databáze: | ScienceDirect |
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