Control polarity of gallium nitride on Si (1 1 1) using atomic layer annealing and thermal atomic layer deposition
| Autor: | Yun, SeongUk, Lee, Ping-Che, Spiegelman, Jeffrey, Kummel, Andrew C. |
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| Zdroj: | In Applied Surface Science 15 December 2024 676 |
| Databáze: | ScienceDirect |
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