Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks
| Autor: | Stȩpniak, Michał, Owczarek, Sylwia, Szyszka, Adam, Wośko, Mateusz, Paszkiewicz, Regina |
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| Zdroj: | In Applied Surface Science 15 December 2023 640 |
| Databáze: | ScienceDirect |
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