GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content

Autor: Lovergine, Nico, Miccoli, Ilio, Tapfer, Leander, Prete, Paola
Zdroj: In Applied Surface Science 15 October 2023 634
Databáze: ScienceDirect