Control of silicon dioxide etching rate in hydrogen microwave plasma by addition of oxygen

Autor: Yurov, V.Yu., Bolshakov, A.P., Fedorova, I.A., Popovich, A.F., Zyablyuk, K.N., Altakhov, A.S., Sovyk, D.N., Pivovarov, P.A., Volkov, P.V., Ralchenko, V.G.
Zdroj: In Applied Surface Science 1 March 2023 612
Databáze: ScienceDirect