Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition

Autor: Park, Kwangwook, Min, Jung-Wook, Lopatin, Sergei, Davaasuren, Bambar, Park, Tae-Yong, Ooi, Boon S., Kim, Hyeongmun, Yim, Sang-Youp, Cheol Park, Gyeong, Kang, Chul
Zdroj: In Applied Surface Science 15 January 2023 608
Databáze: ScienceDirect