Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition
| Autor: | Deng, Kexin, Wang, Xinhua, Huang, Sen, Jiang, Qimeng, Yin, Haibo, Fan, Jie, Jing, Guanjun, Wang, Yingjie, Luan, Tiantian, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Liu, Xinyu |
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| Zdroj: | In Applied Surface Science 1 January 2023 607 |
| Databáze: | ScienceDirect |
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