Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
Autor: | Wang, Chun-Yuan, Chou, Chun-Yi, Shiue, Han-Fang, Chen, Hsing-Yang, Ling, Chen-Hsiang, Shyue, Jing-Jong, Chen, Miin-Jang |
---|---|
Zdroj: | In Applied Surface Science 30 May 2022 585 |
Databáze: | ScienceDirect |
Externí odkaz: |
načítá se...