Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices

Autor: Wang, Chun-Yuan, Chou, Chun-Yi, Shiue, Han-Fang, Chen, Hsing-Yang, Ling, Chen-Hsiang, Shyue, Jing-Jong, Chen, Miin-Jang
Zdroj: In Applied Surface Science 30 May 2022 585
Databáze: ScienceDirect
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