Reduction of leakage current in amorphous Oxide-Semiconductor Top-gated thin film transistors by interface engineering with dipolar Self-Assembled monolayers

Autor: Liang, Ya-Hsiang, Kumaran, Saravanan, Zharnikov, Michael, Tai, Yian
Zdroj: In Applied Surface Science 15 December 2021 569
Databáze: ScienceDirect