Reduction of leakage current in amorphous Oxide-Semiconductor Top-gated thin film transistors by interface engineering with dipolar Self-Assembled monolayers
Autor: | Liang, Ya-Hsiang, Kumaran, Saravanan, Zharnikov, Michael, Tai, Yian |
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Zdroj: | In Applied Surface Science 15 December 2021 569 |
Databáze: | ScienceDirect |
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