Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
| Autor: | Yong, Zhihua, Persson, Karl-Magnus, Saketh Ram, Mamidala, D'Acunto, Giulio, Liu, Yi, Benter, Sandra, Pan, Jisheng, Li, Zheshen, Borg, Mattias, Mikkelsen, Anders, Wernersson, Lars-Erik, Timm, Rainer |
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| Zdroj: | In Applied Surface Science 15 June 2021 551 |
| Databáze: | ScienceDirect |
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