Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
| Autor: | Stavarache, Ionel, Cojocaru, Ovidiu, Maraloiu, Valentin Adrian, Teodorescu, Valentin Serban, Stoica, Toma, Ciurea, Magdalena Lidia |
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| Zdroj: | In Applied Surface Science 15 March 2021 542 |
| Databáze: | ScienceDirect |
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