Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs
| Autor: | Pohorelec, O. a, ⁎, Ťapajna, M. a, Gregušová, D. a, Gucmann, F. a, Hasenöhrl, S. a, Haščík, Š. a, Stoklas, R. a, Seifertová, A. a, Pécz, B. b, Tóth, L. b, Kuzmík, J. a |
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| Zdroj: | In Applied Surface Science 30 October 2020 528 |
| Databáze: | ScienceDirect |
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