Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

Autor: Nam, Taewook, Lee, Hyunho, Choi, Taejin, Seo, Seunggi, Yoon, Chang Mo, Choi, Yunjung, Jeong, Heonjong, Lingam, Hima K., Chitturi, Venkateswara R., Korolev, Andrey, Ahn, Jong-Hyun, Kim, Hyungjun
Zdroj: In Applied Surface Science 15 August 2019 485:381-390
Databáze: ScienceDirect