Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

Autor: Alharthi, Bader, Dou, Wei, Grant, Perry C., Grant, Joshua M., Morgan, Timothy, Mosleh, Aboozar, Du, Wei, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed, Yu, Shui-Qing
Zdroj: In Applied Surface Science 1 July 2019 481:246-254
Databáze: ScienceDirect