Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges
| Autor: | Khazaka, Rami, Bogumilowicz, Yann, Rouchon, Denis, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Chevalier, Nicolas, Papon, Anne Marie, David, Sylvain, Maitrejean, Sylvain |
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| Zdroj: | In Applied Surface Science 1 July 2018 445:77-80 |
| Databáze: | ScienceDirect |
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