Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
| Autor: | Palade, C., Lepadatu, A.M., Slav, A., Lazanu, S., Teodorescu, V.S., Stoica, T., Ciurea, M.L. |
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| Zdroj: | In Applied Surface Science 15 January 2018 428:698-702 |
| Databáze: | ScienceDirect |
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