Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment
| Autor: | Zhong, Yaozong, Zhou, Yu, Gao, Hongwei, Dai, Shujun, He, Junlei, Feng, Meixin, Sun, Qian, Zhang, Jijun, Zhao, Yanfei, DingSun, An, Yang, Hui |
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| Zdroj: | In Applied Surface Science 31 October 2017 420:817-824 |
| Databáze: | ScienceDirect |
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