Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

Autor: Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T.
Zdroj: In Applied Surface Science 15 January 2017 392:1043-1048
Databáze: ScienceDirect