Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
Autor: | Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T. |
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Zdroj: | In Applied Surface Science 15 January 2017 392:1043-1048 |
Databáze: | ScienceDirect |
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