Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
| Autor: | Besleaga, C., Stan, G.E., Pintilie, I., Barquinha, P., Fortunato, E., Martins, R. |
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| Zdroj: | In Applied Surface Science 30 August 2016 379:270-276 |
| Databáze: | ScienceDirect |
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