Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy
| Autor: | Navarro-Quezada, A., Galazka, Z., Alamé, S., Skuridina, D., Vogt, P., Esser, N. |
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| Zdroj: | In Applied Surface Science 15 September 2015 349:368-373 |
| Databáze: | ScienceDirect |
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