Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing
Autor: | Abi-Tannous, T., Soueidan, M., Ferro, G., Lazar, M., Toury, B., Beaufort, M.F., Barbot, J.F., Penuelas, J., Planson, D. |
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Zdroj: | In Applied Surface Science 30 August 2015 347:186-192 |
Databáze: | ScienceDirect |
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