Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Autor: Abi-Tannous, T., Soueidan, M., Ferro, G., Lazar, M., Toury, B., Beaufort, M.F., Barbot, J.F., Penuelas, J., Planson, D.
Zdroj: In Applied Surface Science 30 August 2015 347:186-192
Databáze: ScienceDirect