Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors
| Autor: | Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V. |
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| Zdroj: | In Applied Surface Science 1 September 2014 312:157-161 |
| Databáze: | ScienceDirect |
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