Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs

Autor: Gong, Youpin, Zhai, Haifa, Liu, Xiaojie, Kong, Jizhou, Wu, Di, Li, Aidong
Zdroj: In Applied Surface Science 1 February 2014 291:35-39
Databáze: ScienceDirect