Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

Autor: Lee, W.C.T., Bishop, N., Thompson, D.L., Xue, K., Scappucci, G., Cederberg, J.G., Gray, J.K., Han, S.M., Celler, G.K., Carroll, M.S., Simmons, M.Y.
Zdroj: In Applied Surface Science 15 January 2013 265:833-838
Databáze: ScienceDirect