Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy
Autor: | Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D. |
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Zdroj: | In Applied Surface Science 15 September 2012 258(23):9208-9212 |
Databáze: | ScienceDirect |
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