Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Autor: Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D.
Zdroj: In Applied Surface Science 15 September 2012 258(23):9208-9212
Databáze: ScienceDirect