Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy
| Autor: | Yang, X.M., Yu, T., Wu, X.M., zhuge, L.J., Ge, S.B., He, J.J. |
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| Zdroj: | In Applied Surface Science 2011 257(22):9277-9281 |
| Databáze: | ScienceDirect |
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