Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition
| Autor: | Chiang, C.H., Chen, K.M., Wu, Y.H., Yeh, Y.S., Lee, W.I., Chen, J.F., Lin, K.L., Hsiao, Y.L., Huang, W.C., Chang, E.Y. |
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| Zdroj: | In Applied Surface Science 15 January 2011 257(7):2415-2418 |
| Databáze: | ScienceDirect |
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