Study of n + type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
| Autor: | Abdellaoui, T., Daoudi, M., Bardaoui, A., Chtourou, R. |
|---|---|
| Zdroj: | In Applied Surface Science 2010 256(20):5946-5951 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect