Effect of laser annealing on crystallinity of the Si layers in Si/SiO 2 multiple quantum wells

Autor: Arguirov, T., Mchedlidze, T., Akhmetov, V.D., Kouteva-Arguirova, S., Kittler, M., Rölver, R., Berghoff, B., Först, M., Bätzner, D.L., Spangenberg, B.
Zdroj: In Applied Surface Science 2007 254(4):1083-1086
Databáze: ScienceDirect