Depth control of a silicon structure fabricated by 100 q keV Ar ion beam lithography
Autor: | Kawasegi, Noritaka, Morita, Noboru, Yamada, Shigeru, Takano, Noboru, Oyama, Tatsuo, Momota, Sadao, Taniguchi, Jun, Miyamoto, Iwao |
---|---|
Zdroj: | In Applied Surface Science 2007 253(6):3284-3291 |
Databáze: | ScienceDirect |
Externí odkaz: |