Depth control of a silicon structure fabricated by 100 q keV Ar ion beam lithography

Autor: Kawasegi, Noritaka, Morita, Noboru, Yamada, Shigeru, Takano, Noboru, Oyama, Tatsuo, Momota, Sadao, Taniguchi, Jun, Miyamoto, Iwao
Zdroj: In Applied Surface Science 2007 253(6):3284-3291
Databáze: ScienceDirect