Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
| Autor: | Begotti, M, Longo, M, Magnanini, R, Parisini, A, Tarricone, L, Bocchi, C, Germini, F, Lazzarini, L, Nasi, L, Geddo, M |
|---|---|
| Zdroj: | In Applied Surface Science 30 January 2004 222(1-4):423-431 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect