Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Autor: | Begotti, M, Longo, M, Magnanini, R, Parisini, A, Tarricone, L, Bocchi, C, Germini, F, Lazzarini, L, Nasi, L, Geddo, M |
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Zdroj: | In Applied Surface Science 30 January 2004 222(1-4):423-431 |
Databáze: | ScienceDirect |
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